… Since Nakamura et al.'s report of pulsed operation, many groups have reported pulsed
operation of the LDs using the same structure (34–40). The latest results showed that the lifetime …

High-brightness blue, green and yellow light-emitting diodes (LEDs) with quantum well
structures based on III-V nitrides were grown by metalorganic chemical vapor deposition on …

The Japanese Society of Hypertension (JSH) revised the Guidelines for the Management of
Hypertension 2014 (JSH 2014), and published the JSH 2019. In the development of the JSH …

… GaN was first investigated as a potential material for LEDs in the late 1960s by Paul
Maruska and Jacques Pankove at the Radio Corporation of America (RCA) and in later …

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) fabricated from III-V nitride
materials were grown by metalorganic chemical vapor deposition on sapphire substrates. The …

IgG4-related disease (IgG4-RD) is an immunemediated fibroinflammatory condition that can
affect multiple organs and lead to tumefactive, tissuedestructive lesions and organ failure (1)…

Shuji Nakamura's development of commercial … Nakamura's hard work, another factor is
Nichia's enlightened founder, Chairman and joint owner, Nobuo Ogawa without whom Nakamura …

… 4×10 16 /cm 3 and 600 cm 2 /V·s, respectively, at room temperature. The values became
8×10 15 /cm 3 and 1500 cm 2 /V·s at 77 K, respectively. These values of Hall mobility are the …

… Nakamura was a little known researcher at a small but successful Japanese company, …
Nakamura was given a few million dollars by the company's Chairman Nobuo Ogawa. Nakamura …

Low-resistivity p-type GaN films, which were obtained by N 2-ambient thermal annealing or
low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1× …